Invention Grant
- Patent Title: Photoelectric conversion device, method of manufacturing the same, and X-ray image detector
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Application No.: US14051247Application Date: 2013-10-10
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Publication No.: US10096642B2Publication Date: 2018-10-09
- Inventor: Takayuki Ishino
- Applicant: NLT Technologies, Ltd.
- Applicant Address: JP Kanagawa
- Assignee: NLT TECHNOLOGIES, LTD.
- Current Assignee: NLT TECHNOLOGIES, LTD.
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-226679 20121012
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146

Abstract:
Provided are a photoelectric conversion device, a method of manufacturing the photoelectric conversion device, and an X-ray image detector. A photoelectric conversion device at least includes a photodiode device. The photodiode device includes a lower electrode and an upper electrode, and a photoelectric conversion layer put between the lower and upper electrodes, where the photoelectric conversion layer includes a patterned edge surface, is smaller in size than the lower electrode and is placed on a surface of the lower electrode. The photodiode device further includes a protecting film covering at least the patterned edge surface of the photoelectric conversion layer. The protecting film except for an area where a contact hole is formed and the lower electrode are formed with a same-shaped pattern.
Public/Granted literature
- US20140103347A1 PHOTOELECTRIC CONVERSION DEVICE, METHOD OF MANUFACTURING THE SAME, AND X-RAY IMAGE DETECTOR Public/Granted day:2014-04-17
Information query
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