Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15445274Application Date: 2017-02-28
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Publication No.: US10096615B2Publication Date: 2018-10-09
- Inventor: Ki Hong Lee , Seung Ho Pyi , Sung Ik Moon
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2012-0074919 20120710
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L21/033 ; H01L27/11582 ; H01L27/11556 ; H01L27/11548 ; H01L27/11575

Abstract:
A semiconductor device includes a cell structure; n first pad structures formed on one side of the cell structure and each configured to have a step form in which 2n layers form one stage; and n second pad structures formed on the other side of the cell structure each configured to have a step form in which 2n layers form one stage, wherein n is a natural number of 1 or higher, and the first pad structures and the second pad structures have asymmetrical step forms having different heights.
Public/Granted literature
- US20170170193A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-06-15
Information query
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