Invention Grant
- Patent Title: Fin-based diode structures with a realigned feature layout
-
Application No.: US15794688Application Date: 2017-10-26
-
Publication No.: US10096587B1Publication Date: 2018-10-09
- Inventor: Mickey Yu , Alain Loiseau , Souvick Mitra , Tsung-Che Tsai , You Li , Robert J. Gauthier, Jr.
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBAL FOUNDRIES Inc.
- Current Assignee: GLOBAL FOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/088 ; H01L21/8234 ; H01L23/535 ; H01L29/06

Abstract:
Diode structures and methods of fabricating diode structures. First and second gate structures are formed with the second gate structure arranged parallel to the first gate structure. First and second fins are formed that extend vertically from a top surface of a substrate. The first and second fins are arranged between the first gate structure and the second gate structure. A contact structure is coupled with the first fin and the second fin. The contact structure is laterally arranged between the first gate structure and the second gate structure.
Information query
IPC分类: