Invention Grant
- Patent Title: Semiconductor device having an epitaxial layer and manufacturing method thereof
-
Application No.: US15582919Application Date: 2017-05-01
-
Publication No.: US10096554B2Publication Date: 2018-10-09
- Inventor: Yoshikazu Tsunemine
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2016-115296 20160609
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L23/544 ; H01L21/027 ; H01L29/06
Abstract:
A mark is formed over the surface of a silicon substrate. The mark includes a silicon oxide film, in which a plurality of rectangular groove patterns are concentrically arranged, and a silicon nitride film formed in the groove patterns. A P-type epitaxial layer is formed over the surface of the silicon substrate. Then, a photoresist pattern is formed. In the photoresist pattern, a rectangular opening pattern is formed in a mark region. Optical superposition inspection is performed for the base of the photoresist pattern.
Public/Granted literature
- US20170358539A1 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD Public/Granted day:2017-12-14
Information query
IPC分类:
