Invention Grant
- Patent Title: Semiconductor device and method of manufacturing same
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Application No.: US15916615Application Date: 2018-03-09
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Publication No.: US10096510B2Publication Date: 2018-10-09
- Inventor: Tadashi Yamaguchi
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-083003 20140414
- Main IPC: H01L21/764
- IPC: H01L21/764 ; H01L21/762 ; H01L21/308 ; H01L21/02 ; H01L27/092 ; H01L21/8238 ; H01L29/10 ; H01L29/78 ; H01L29/66 ; H01L29/423
Abstract:
To provide a semiconductor device having improved performance. The semiconductor device has a first insulating film formed on the main surface of a semiconductor substrate and a second insulating film formed on the first insulating film. The semiconductor device further has a first opening portion penetrating through the second insulating film and reaching the first insulating film, a second opening portion penetrating through the first insulating film and reaching the semiconductor substrate, and a trench portion formed in the semiconductor substrate. A first opening width of the first opening portion and a second opening width of the second opening portion are greater than a trench width of the trench portion. The trench portion is closed by a third insulating film while leaving a space in the trench portion.
Public/Granted literature
- US20180197768A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME Public/Granted day:2018-07-12
Information query
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