Invention Grant
- Patent Title: Partial net shape and partial near net shape silicon carbide chemical vapor deposition
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Application No.: US15261088Application Date: 2016-09-09
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Publication No.: US10096471B2Publication Date: 2018-10-09
- Inventor: Justin Charles Canniff
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: US CA Fremont
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/304
Abstract:
A method for fabricating a structure having surfaces exposed to plasma in a substrate processing system includes providing a sacrificial substrate having a first shape, machining the substrate into a second shape, the second shape having dimensions corresponding to a desired final shape of the structure, depositing a layer of material on the substrate, machining first selected portions of the layer of material to expose the substrate within the layer of material, removing remaining portions of the substrate, and machining second selected portions of the layer of material into the structure having the desired final shape without machining the surfaces of the structure that are exposed to plasma during processing.
Public/Granted literature
- US20180040479A1 PARTIAL NET SHAPE AND PARTIAL NEAR NET SHAPE SILICON CARBIDE CHEMICAL VAPOR DEPOSITION Public/Granted day:2018-02-08
Information query
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