Embodiments of the invention include a substrate (10) and a semiconductor structure (12) grown on the substrate. The semiconductor structure includes a light emitting layer (18) disposed between an n-type region (16) and a p-type region (20). The substrate includes a first sidewall (30) and a second sidewall (32). The first sidewall and second sidewall are disposed at different angles relative to a major surface of the semiconductor structure. A reflective layer (34) is disposed over the first sidewall (30).