Invention Grant
- Patent Title: Graphene-metal bonding structure, method of manufacturing the same, and semiconductor device having the graphene-metal bonding structure
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Application No.: US14533802Application Date: 2014-11-05
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Publication No.: US10090386B2Publication Date: 2018-10-02
- Inventor: Jaeho Lee , Hyeonjin Shin , Minhyun Lee , Changseok Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0072972 20140616
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0256 ; H01L29/16 ; H01L29/78 ; H01L29/45 ; H01L29/778 ; H01L29/10 ; H01L29/165 ; H01L21/285 ; H01L23/485 ; H01L29/417
Abstract:
Provided are a graphene-metal bonding structure, a method of manufacturing the graphene-metal bonding structure, and a semiconductor device including the graphene-metal bonding structure. According to example embodiments, a graphene-metal bonding structure includes: a graphene layer; a metal layer on the graphene layer; and an intermediate material layer between the graphene layer and the metal layer. The intermediate material layer forms an edge-contact with the metal layer from boundary portions of a material contained in the intermediate material layer that contact the metal layer.
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