Invention Grant
- Patent Title: Integrated device with P-I-N diodes and vertical field effect transistors
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Application No.: US15698041Application Date: 2017-09-07
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Publication No.: US10090293B2Publication Date: 2018-10-02
- Inventor: Kangguo Cheng , Juntao Li , Geng Wang , Qintao Zhang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8238 ; H01L21/336 ; H01L27/148 ; H01L29/80 ; H01L27/06 ; H01L21/8234 ; H01L29/06 ; H01L29/868 ; H01L29/78 ; H01L27/02 ; H01L29/66
Abstract:
An integrated device is provided. The integrated device includes a substrate having a doped upper surface section and an insulator to define first and second substrate regions on opposite sides thereof. Vertical transistors are operably arranged on the doped upper surface section at the first substrate region. P-I-N diodes are operably arranged on the doped upper surface section at the second substrate region.
Public/Granted literature
- US20180053758A1 INTEGRATED DEVICE WITH P-I-N DIODES AND VERTICAL FIELD EFFECT TRANSISTORS Public/Granted day:2018-02-22
Information query
IPC分类:
