A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first conductive structure over the substrate. The semiconductor device structure includes a first dielectric layer over the substrate and the first conductive structure. The semiconductor device structure includes a second conductive structure over the first conductive structure and extending into the first dielectric layer. The second conductive structure is electrically connected to the first conductive structure. The semiconductor device structure includes a cover layer between the second conductive structure and the first dielectric layer. The cover layer surrounds the second conductive structure, the second conductive structure passes through the cover layer and is partially between the cover layer and the first conductive structure, and the cover layer includes a metal oxide.