Invention Grant
- Patent Title: System and method for dual-region singulation
-
Application No.: US15403673Application Date: 2017-01-11
-
Publication No.: US10090215B2Publication Date: 2018-10-02
- Inventor: Andrew Christopher Graeme Wood , Gernot Fasching , Marius Aurel Bodea , Thomas Krotscheck Ostermann , Erwin Bacher
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
- Current Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
- Current Assignee Address: AT Villach
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/66 ; H01L21/78 ; H01L23/485 ; H01L23/482 ; H01L23/528 ; H01L23/532 ; H01L23/58 ; H01L23/00 ; G06F17/50
Abstract:
A semiconductor die includes a semiconductor circuit disposed within or over a substrate. A conductive contact pad is disposed over the substrate outside the semiconductor circuit. A floating electrical path ends at a singulated edge of the die. The electrical path is electrically coupled to the conductive contact pad.
Public/Granted literature
- US20170125315A1 System and Method for Dual-Region Singulation Public/Granted day:2017-05-04
Information query
IPC分类:
