A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. The partially completed semiconductor component has a bottom side and a top side spaced distant from the bottom side in a vertical direction. Also provided is an etchant. On the top side, a dielectric layer is arranged. The dielectric layer has at least two different regions that show different etch rates when they are etched with the etchant. Subsequently, a trench is formed in the dielectric layer such that the trench intersects each of the different regions. Then, the trench is widened by etching the trench with the etchant at different etch rates. By filling the widened trench with an electrically conductive material, a conductor line is formed.