Invention Grant
- Patent Title: Memory device having negative voltage generator
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Application No.: US15465999Application Date: 2017-03-22
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Publication No.: US10090055B2Publication Date: 2018-10-02
- Inventor: Tae Heui Kwon
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0090133 20160715
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G11C16/26 ; G11C16/10 ; G11C16/08
Abstract:
Provided herein is a voltage generating circuit including: a negative voltage pump configured to generate a first negative voltage; and a negative voltage regulator configured to generate a second negative voltage using the first negative voltage and output the second negative voltage through an output terminal. The negative voltage regulator includes a first amplifier circuit configured to be controlled by a voltage of the output terminal, and a voltage booster configured to increase a voltage of the output terminal depending on an output voltage of the first amplifier circuit.
Public/Granted literature
- US20180019015A1 MEMORY DEVICE HAVING NEGATIVE VOLTAGE GENERATOR Public/Granted day:2018-01-18
Information query
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