Methods and apparatus for artificial exciton devices. An artificial exciton device includes a semiconductor substrate; at least one well region doped to a first conductivity type in a portion of the semiconductor substrate; a channel region in a central portion of the well region; a cathode region in the well region doped to a second conductivity type; an anode region in the well region doped to the first conductivity type; a first lightly doped drain region disposed between the cathode region and the channel region doped to the first conductivity type; a second lightly doped drain region disposed between the anode region and the channel region doped to the second conductivity type; and a gate structure overlying the channel region, the gate structure comprising a gate dielectric layer lying over the channel region and a gate conductor material overlying the gate dielectric. Methods are disclosed.