Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15281095Application Date: 2016-09-30
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Publication No.: US10068861B2Publication Date: 2018-09-04
- Inventor: Kun-Shu Chuang
- Applicant: ChipMOS Technologies Inc.
- Applicant Address: TW Hsinchu
- Assignee: ChipMOS Technologies Inc.
- Current Assignee: ChipMOS Technologies Inc.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW105117997A 20160607
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/498

Abstract:
Provided is a semiconductor device including a substrate, a pad, a protective layer, a plurality of convex patterns, a redistribution layer (RDL), and a bump. The pad is disposed on the substrate. The protective layer is disposed on the substrate. The protective layer has a first opening exposing a portion of a surface of the pad. The convex patterns are disposed on the protective layer. The RDL is disposed on the convex patterns. The RDL extends from the pad to the convex patterns. The bump is disposed on the convex patterns.
Public/Granted literature
- US20170352631A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-12-07
Information query
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