Invention Grant
- Patent Title: Semiconductor device manufacturing method
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Application No.: US15449712Application Date: 2017-03-03
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Publication No.: US10068796B2Publication Date: 2018-09-04
- Inventor: Toshiyuki Sasaki
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2016-186005 20160923
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/302 ; H01L21/461 ; H01B13/00 ; B44C1/22 ; C23F1/00 ; C23F3/00 ; H01L21/768 ; H01L21/027 ; H01L21/033 ; H01L21/02 ; H01L21/308
Abstract:
A semiconductor device manufacturing method includes forming a first hole in a first processed layer. A first sacrificial film is formed in the first hole. A hole portion is formed in the first sacrificial film. A second sacrificial film is formed in the hole portion. A second processed layer is formed above the first sacrificial film and the second sacrificial film, and a second hole is formed in the second processed layer to expose the second sacrificial film. A third sacrificial film is formed on an inner side surface of the second hole, and a fourth sacrificial film is formed on the third sacrificial film. The second sacrificial film is etched using the fourth sacrificial film as a mask. The third sacrificial film exposed by etching the second sacrificial film is etched. The second processed layer is etched using the third sacrificial film as a mask.
Public/Granted literature
- US20180090369A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2018-03-29
Information query
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