There is disclosed an electronic device comprising a semiconductor memory unit capable of reducing the switching current of a variable resistance element that switches between different resistance states. In an implementation, an electronic device includes a semiconductor memory unit that includes a variable resistance element comprising a first magnetic layer configured to have a magnetization direction pinned, a second magnetic layer configured to have a magnetization direction not pinned, and a non-magnetic layer interposed between the first magnetic layer and the second magnetic layer, wherein the variable resistance element comprises plane shapes having a plurality of edges, and the number of angled edges is larger than the number of rounded edges as a damping constant of the second magnetic layer increase.