Invention Grant
- Patent Title: Method of manufacturing a light emitting device
-
Application No.: US15626170Application Date: 2017-06-18
-
Publication No.: US10043945B2Publication Date: 2018-08-07
- Inventor: Chien Cheng Huang , Kuo-Wei Yen , Yu-Wei Kuo , Yao-Wei Yang , Pei-Hsiang Tseng
- Applicant: EPISTAR CORPORATION
- Applicant Address: TW Hsinchu
- Assignee: EPISTAR CORPORATION
- Current Assignee: EPISTAR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agent Ding Yu Tan
- Main IPC: H01L33/14
- IPC: H01L33/14 ; H01L33/00 ; H01L33/42 ; H01L33/44 ; H01L33/38 ; H01L33/32 ; H01L33/24

Abstract:
A method for fabricating a light emitting device, comprising: forming a plurality of light emitting stacked layers above a substrate; forming and patterning a current blocking (CB) layer on the light emitting stacked layers; forming a transparent conductive layer covering the light emitting stacked layers and the current blocking layer; etching the transparent conductive layer and exposing a reserved region for a first pad electrode and a mesa structure, respectively; and etching an exposed portion of the light emitting stacked layers and a portion of the current blocking layer to form a remaining current blocking layer, the mesa structure and a first opening.
Public/Granted literature
- US20170294558A1 METHOD OF MANUFACTURING A LIGHT EMITTING DEVICE Public/Granted day:2017-10-12
Information query
IPC分类: