Invention Grant
- Patent Title: Highly responsive III-V photodetectors using ZnO:Al as n-type emitter
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Application No.: US15604574Application Date: 2017-05-24
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Publication No.: US10043920B2Publication Date: 2018-08-07
- Inventor: Jeehwan Kim , Ning Li , Devendra K. Sadana , Brent A. Wacaser
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L31/0304 ; H01L31/105 ; H01L31/0224 ; H01L31/18
Abstract:
A photodiode includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. An intrinsic layer is formed over the substrate and including a III-V material. A transparent II-VI n-type layer is formed on the intrinsic layer and functions as an emitter and an n-type ohmic contact.
Public/Granted literature
- US20170263788A1 HIGHLY RESPONSIVE III-V PHOTODETECTORS USING ZnO:Al AS N-TYPE EMITTER Public/Granted day:2017-09-14
Information query
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