Invention Grant
- Patent Title: Semiconductor devices with shaped portions of elevated source/drain regions
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Application No.: US14963731Application Date: 2015-12-09
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Publication No.: US10043902B2Publication Date: 2018-08-07
- Inventor: Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-Ik Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
- Applicant: Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-Ik Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2012-0055543 20120524
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/28 ; H01L29/66 ; H01L29/40 ; H01L21/285 ; H01L21/265 ; H01L29/165 ; H01L23/485 ; H01L21/768 ; H01L27/092 ; H01L29/08 ; H01L29/16 ; H01L29/161
Abstract:
A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.
Public/Granted literature
- US20160233334A1 SEMICONDUCTOR DEVICES WITH SHAPED PORTIONS OF ELEVATED SOURCE/DRAIN REGIONS Public/Granted day:2016-08-11
Information query
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