Invention Grant
- Patent Title: Manufacturing method for semiconductor device
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Application No.: US15672097Application Date: 2017-08-08
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Publication No.: US10043884B2Publication Date: 2018-08-07
- Inventor: Toshikazu Hanawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2015-162873 20150820
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L29/66 ; H01L21/02 ; H01L29/423 ; H01L29/417 ; H01L29/08 ; H01L29/10 ; H01L21/266 ; H01L21/311 ; H01L29/732
Abstract:
Provided is a method for manufacturing a semiconductor device that improves the reliability of the semiconductor device. An opening is formed in an insulating film formed over a semiconductor substrate. At that time, a mask layer for formation of the opening is formed over the insulating film. The insulating film is dry etched and then wet etched. The dry etching step is finished before the semiconductor substrate is exposed at the bottom of the opening, and the wet etching step is finished after the semiconductor substrate is exposed at the bottom of the opening.
Public/Granted literature
- US20170338324A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE Public/Granted day:2017-11-23
Information query
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