Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15065206Application Date: 2016-03-09
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Publication No.: US10043872B2Publication Date: 2018-08-07
- Inventor: Takahide Tanaka , Masaharu Yamaji
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JP2015-079213 20150408
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/10 ; H01L29/417 ; H01L29/78 ; H01L29/739 ; H01L29/772 ; H01L29/06 ; H01L23/522 ; H01L27/08 ; H01L49/02 ; H01L23/532
Abstract:
A semiconductor device includes a resistive element wherein a diffusion resistance region provided in an upper portion of a semiconductor base and a thin film resistance layer isolated and distanced from the semiconductor base and diffusion resistance region across an insulating film are alternately connected in series and alternately disposed in parallel.
Public/Granted literature
- US20160300912A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-10-13
Information query
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