Invention Grant
- Patent Title: Semiconductor structure and method of forming the same
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Application No.: US15249462Application Date: 2016-08-28
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Publication No.: US10043868B2Publication Date: 2018-08-07
- Inventor: I-Ming Tseng , Chun-Hsien Lin , Wen-An Liang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW105124552A 20160803
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/06 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor structure and method of forming the same. The semiconductor structure includes a fin structure formed on a substrate and an isolation structure formed therein. The isolation structure includes a trench with a concave upper sidewall, a straight lower sidewall and a rounded top corner. A first dielectric layer fills a lower portion of the trench. A second dielectric layer covers a top surface of the first dielectric layer, the concave upper sidewall and the rounded top corner of the trench.
Public/Granted literature
- US20180040694A1 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2018-02-08
Information query
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