Invention Grant
- Patent Title: Electric fields relaxation for semiconductor apparatus
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Application No.: US15243982Application Date: 2016-08-23
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Publication No.: US10043791B2Publication Date: 2018-08-07
- Inventor: Tatsuya Naito
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2015-203103 20151014
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/02 ; H01L29/10 ; H01L29/739 ; H01L29/866
Abstract:
A semiconductor apparatus includes a semiconductor substrate, a semiconductor element, an edge termination region that surrounds the semiconductor element, a protective diode that has a first terminal and a second terminal, where the first terminal is positioned within the edge termination region and the second terminal is positioned outside the edge termination region, and a diffusion layer that has a floating potential, where the diffusion layer is provided in a gap portion between a region of the edge termination region that is aligned with the protective diode and the protective diode.
Public/Granted literature
- US20170110447A1 SEMICONDUCTOR APPARATUS Public/Granted day:2017-04-20
Information query
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