Invention Grant
- Patent Title: Semiconductor device having air gap structures and method of fabricating thereof
-
Application No.: US15350689Application Date: 2016-11-14
-
Publication No.: US10043754B2Publication Date: 2018-08-07
- Inventor: Chih-Yuan Ting , Jyu-Horng Shieh
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768 ; H01L23/522 ; H01L21/764 ; H01L23/528
Abstract:
A device having a conductive feature disposed on a substrate; a cap structure is disposed on top of the conductive feature and on at least two sidewalls of the conductive feature. An air gap cap disposed on the cap structure and defines an air gap adjacent the conductive feature.
Public/Granted literature
- US20170062348A1 SEMICONDUCTOR DEVICE HAVING AIR GAP STRUCTURES AND METHOD OF FABRICATING THEREOF Public/Granted day:2017-03-02
Information query
IPC分类:
