Invention Grant
- Patent Title: Metal film polishing slurry composition, and method for reducing scratches generated when polishing metal film by using same
-
Application No.: US15030981Application Date: 2014-10-21
-
Publication No.: US10043678B2Publication Date: 2018-08-07
- Inventor: Chang Yong Park , Jong Dai Park , Jong Chul Shin , Jae Hyun Kim , Goo Hwa Lee , Min Sung Park
- Applicant: DONGJIN SEMICHEM CO., LTD.
- Applicant Address: KR Incheon
- Assignee: DONGJIN SEMICHEM CO., LTD.
- Current Assignee: DONGJIN SEMICHEM CO., LTD.
- Current Assignee Address: KR Incheon
- Agency: Nath, Goldberg & Meyer
- Agent Tanya E. Harkins; Joshua B. Goldberg
- Priority: KR10-2013-0126600 20131023
- International Application: PCT/KR2014/009871 WO 20141021
- International Announcement: WO2015/060610 WO 20150430
- Main IPC: H01L21/321
- IPC: H01L21/321 ; C09K3/14 ; C09G1/02 ; H01L21/768
Abstract:
The present invention relates to a slurry composition for reducing scratches generated when polishing the metal film in a manufacturing process of a semiconductor integrated circuit, by lowering frictional force so that a temperature of the composition which may rise during the polishing is lowered, the thermal stability of the slurry is improved and the size increase of particles in the slurry is suppressed, and a method for reducing scratches using the same. The method comprises the steps of applying a slurry composition for polishing a metal film to a substrate on which the metal film is formed, the slurry composition containing an organic solvent including a nitrogen atom and a glycol-based organic solvent; and making a polishing pad to be contacted to the substrate and moving the polishing pad with respect to the substrate, thereby removing at least part of the metal film from the substrate.
Public/Granted literature
Information query
IPC分类:
