Invention Grant
- Patent Title: Final polishing method of silicon wafer and silicon wafer
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Application No.: US15328699Application Date: 2015-07-13
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Publication No.: US10043673B2Publication Date: 2018-08-07
- Inventor: Michito Sato
- Applicant: SHIN-ETSU HANDOTAI CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee: SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2014-159737 20140805
- International Application: PCT/JP2015/003522 WO 20150713
- International Announcement: WO2016/021117 WO 20160211
- Main IPC: H01L21/306
- IPC: H01L21/306 ; B24B37/24 ; B24B57/02 ; C09G1/02 ; C09K3/14

Abstract:
A final polishing method using a polishing agent that contains colloidal silica, ammonia, and hydroxyethyl cellulose in which the colloidal silica has a primary particle size of 20 nm or more and less than 30 nm, the hydroxyethyl cellulose has a weight average molecular weight of 400,000 to 700,000, and the polishing agent satisfies 1.5≤D1/D2≤2.5 where D1 is a particle size having a cumulative volume percentage of 95% of particles contained in the polishing agent, and D2 is a particle size having a cumulative volume percentage of 95% of the colloidal silica in case of dispersing the colloidal silica in water with a concentration identical to a colloidal silica concentration in the polishing agent, and using a polishing pad that exhibits a contact angle of 60° or more 100 seconds after dropping pure water to the polishing pad that has been subjected to seasoning and then dried.
Public/Granted literature
- US20170213742A1 FINAL POLISHING METHOD OF SILICON WAFER AND SILICON WAFER Public/Granted day:2017-07-27
Information query
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