Invention Grant
- Patent Title: Three terminal fuse structure created by oxygen vacancy traps in hafnium-based oxides
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Application No.: US15337594Application Date: 2016-10-28
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Publication No.: US10043584B2Publication Date: 2018-08-07
- Inventor: Eduard A. Cartier , Chandrasekharan Kothandaraman
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: G11C17/16
- IPC: G11C17/16 ; H01L29/51 ; H01L27/112 ; G11C17/18 ; H01L29/78 ; H01L23/525

Abstract:
A fuse structure includes a substrate, a gate dielectric formed on the substrate, a gate electrode formed on the gate dielectric, and first and second source/drain regions formed on the substrate on opposite sides with respect to the gate electrode, wherein the gate dielectric is configured such that a plurality of oxygen vacancies trapping respective charges are formed upon application of a pulse to the gate electrode.
Public/Granted literature
- US20180122491A1 THREE TERMINAL FUSE STRUCTURE CREATED BY OXYGEN VACANCY TRAPS IN HAFNIUM-BASED OXIDES Public/Granted day:2018-05-03
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