Invention Grant
- Patent Title: Phase change memory devices and systems having reduced voltage threshold drift and associated methods
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Application No.: US15445962Application Date: 2017-02-28
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Publication No.: US10043576B2Publication Date: 2018-08-07
- Inventor: Mattia Robustelli
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Thorpe North & Western, LLP
- Agent David W. Osborne
- Main IPC: G11C13/00
- IPC: G11C13/00
Abstract:
Phase change memory devices, systems, and associated methods are provided and described. Such devices, systems, and methods manage and reduce voltage threshold drift to increase read accuracy of phase change memory.
Public/Granted literature
- US20170243643A1 PHASE CHANGE MEMORY DEVICES AND SYSTEMS HAVING REDUCED VOLTAGE THRESHOLD DRIFT AND ASSOCIATED METHODS Public/Granted day:2017-08-24
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