Invention Grant
- Patent Title: Memory device transferring data between master and slave device and semiconductor package including the same
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Application No.: US15345050Application Date: 2016-11-07
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Publication No.: US10042702B2Publication Date: 2018-08-07
- Inventor: Sang-Jin Byeon
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C7/10 ; G11C29/52 ; G11C5/02

Abstract:
A semiconductor package includes: memory devices that are stacked one on another; and an inter-layer channel for communication between the memory devices, wherein each memory device includes: a data pad; a memory core; a data input/output circuit that inputs/outputs data through the data pad; an inter-layer channel transfer circuit that transfers a read data transferred from the memory core to the inter-layer channel or transfers a data inputted through the data input/output circuit to the inter-layer channel; an inter-layer channel reception circuit receiving the data of the inter-layer channel; a read error correction circuit correcting an error of the data transferred from the inter-layer channel reception circuit to produce an error-corrected data and transfers the error-corrected data to the data input/output circuit; and a write error correction circuit generating a parity data to be stored in the memory core based on the data transferred from the inter-layer channel reception circuit.
Public/Granted literature
- US20180129560A1 MEMORY DEVICE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME Public/Granted day:2018-05-10
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