A computer-implemented method for storing and caching data in an all-flash-array includes erasing a TLC-NAND flash cell and programming the cell with a binary value multiple times in sequence corresponding to multiple sequential stages between erasures. The method also includes processing the binary value in relation to a respective threshold voltage at each of the multiple sequential stages. The method further includes storing metadata corresponding to a current stage associated with the number of times the TLC-NAND flash cell has been programmed since being erased.