Invention Grant
- Patent Title: Image sensor having wide dynamic range, pixel circuit of the image sensor, and operating method of the image sensor
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Application No.: US15190297Application Date: 2016-06-23
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Publication No.: US10015428B2Publication Date: 2018-07-03
- Inventor: Ji-won Lee , Moo-sup Lim , Seung-sik Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0096786 20150707
- Main IPC: H04N5/335
- IPC: H04N5/335 ; H04N3/14 ; H04N5/3745 ; H04N5/355 ; H04N5/232

Abstract:
A pixel circuit includes a first photocharge accumulator including at least two photodiodes exposed to light for a long period of time, and a second photocharge accumulator including at least one photodiode exposed to light for a short period of time. The pixel circuit includes a first transfer controller that transfers photocharges accumulated in the first photocharge accumulator to a floating diffusion area, and a second transfer controller that transfers photocharges accumulated in the second photocharge accumulator to the floating diffusion area. The pixel circuit includes a driving transistor to generate a pixel signal according to the photocharges transferred to the floating diffusion area. A number of photodiodes of the first photocharge accumulator is greater than a number of photodiodes of the second photocharge accumulator.
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