Invention Grant
- Patent Title: Laser device and process for fabricating such a laser device
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Application No.: US14827429Application Date: 2015-08-17
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Publication No.: US10014660B2Publication Date: 2018-07-03
- Inventor: Thomas Ferrotti , Badhise Ben Bakir , Alain Chantre , Sebastien Cremer , Helene Duprez
- Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives , STMICROELECTRONICS SA , STMICROELECTRONICS (CROLLES 2) SAS
- Applicant Address: FR Paris FR Montrouge FR Crolles
- Assignee: Commisariat A L'Energie Atomique et aux Energies Alternatives,STMICROELECTRONICS SA,STMICROELECTRONICS (CROLLES 2) SAS
- Current Assignee: Commisariat A L'Energie Atomique et aux Energies Alternatives,STMICROELECTRONICS SA,STMICROELECTRONICS (CROLLES 2) SAS
- Current Assignee Address: FR Paris FR Montrouge FR Crolles
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1457937 20140822
- Main IPC: H01S5/125
- IPC: H01S5/125 ; H01S5/12 ; H01S5/02 ; H01S5/026 ; H01S5/343 ; H01S5/022 ; H01S5/042 ; H01S5/10 ; H01S5/187 ; H01S5/323 ; G02B6/12 ; G02B6/30 ; G02B6/34
Abstract:
The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).
Public/Granted literature
- US20160056612A1 LASER DEVICE AND PROCESS FOR FABRICATING SUCH A LASER DEVICE Public/Granted day:2016-02-25
Information query
