Invention Grant
- Patent Title: Chalcogen back surface field layer
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Application No.: US15281789Application Date: 2016-09-30
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Publication No.: US10014423B2Publication Date: 2018-07-03
- Inventor: Priscilla D. Antunez , Bruce A. Ek , Richard A. Haight , Ravin Mankad , Saurabh Singh , Teodor K. Todorov
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent Vazken Alexanian
- Main IPC: H04L21/00
- IPC: H04L21/00 ; H01L31/032 ; H01L31/072 ; H01L31/0216 ; H01L31/18 ; H01L31/0224

Abstract:
Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.
Public/Granted literature
- US20180097130A1 Chalcogen Back Surface Field Layer Public/Granted day:2018-04-05
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