Invention Grant
- Patent Title: Vertical transport field effect transistor with precise gate length definition
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Application No.: US15195332Application Date: 2016-06-28
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Publication No.: US10014391B2Publication Date: 2018-07-03
- Inventor: Marc A. Bergendahl , Kangguo Cheng , Fee Li Lie , Eric R. Miller , John R. Sporre , Sean Teehan
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L21/308
Abstract:
Techniques relate to a gate stack for a semiconductor device. A vertical fin is formed on a substrate. The vertical fin has an upper portion and a bottom portion. The upper portion of the vertical fin has a recessed portion on sides of the upper portion. A gate stack is formed in the recessed portion of the upper portion of the vertical fin.
Public/Granted literature
- US20170373166A1 VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR WITH PRECISE GATE LENGTH DEFINITION Public/Granted day:2017-12-28
Information query
IPC分类:
