Invention Grant
- Patent Title: Fabrication of semiconductor junctions
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Application No.: US14878861Application Date: 2015-10-08
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Publication No.: US10014373B2Publication Date: 2018-07-03
- Inventor: Mattias Borg , Kirsten Moselund , Heinz Schmid , Heike Riel
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel Morris, Esq.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L21/02

Abstract:
Methods are provided for fabricating a semiconductor junction. A first semiconductor structure is selectively grown in a nanotube, which extends laterally over a substrate, from a seed extending within the nanotube. The seed is removed to expose the first semiconductor structure and create a cavity in the nanotube. A second semiconductor structure is selectively grown in the cavity from the first semiconductor structure, thereby forming a semiconductor junction between the first and second structures.
Public/Granted literature
- US20170104058A1 FABRICATION OF SEMICONDUCTOR JUNCTIONS Public/Granted day:2017-04-13
Information query
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