An IGBT region includes a collector layer, a first drift layer, a first body layer, an emitter layer, and a trench gate reaching the first drift layer through the first body layer from a front surface side of a semiconductor substrate. A diode region includes a cathode layer, a second drift layer, and a second body layer. A lifetime control region which includes a peak of a crystal defect density is provided in the first drift layer and the second drift layer that are located between a depth of a lower end of the trench gate and surfaces of the first drift layer and the second drift layer. A silicon nitride film is further provided above the trench gate on the front surface side of the semiconductor substrate.