An imaging pixel may be provided with an upper substrate layer, a lower substrate layer, a floating diffusion region in the upper substrate layer, and a photodiode in the upper substrate layer that is coupled to the floating diffusion region. The imaging pixel may also include a source follower transistor in the lower substrate layer and an interconnect layer in between the upper substrate layer and the lower substrate layer. The interconnect layer may couple the floating diffusion region directly to the source follower transistor. The imaging pixel may include a reset transistor in the upper substrate layer. The imaging pixel may include a metal layer in the lower substrate layer, a transfer transistor in the upper substrate layer, and an interconnect layer that couples the transfer transistor to the metal layer.