Invention Grant
- Patent Title: Semiconductor integrated circuit
-
Application No.: US14989211Application Date: 2016-01-06
-
Publication No.: US10014290B2Publication Date: 2018-07-03
- Inventor: Jong Su Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2013-0047252 20130429
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H01L27/02 ; H02H9/04 ; H01L27/06

Abstract:
A first power line configured to receive a first voltage, a second power line configured to receive a second voltage which is lower than the first voltage, a first clamping unit configured to be connected to the first power line, a second clamping unit configured to be connected between the first clamping unit and the second power line, and a discharging unit configured to, when an abnormal voltage introduced through the first power line or the second power line is applied, discharge the abnormal voltage by coupling with the first clamping unit or the second clamping unit are included.
Public/Granted literature
- US20160118375A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2016-04-28
Information query