Invention Grant
- Patent Title: Semiconductor structure and method of manufacturing the same
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Application No.: US14947898Application Date: 2015-11-20
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Publication No.: US10014271B2Publication Date: 2018-07-03
- Inventor: Chen-Hua Yu , Ming-Fa Chen , Sung-Feng Yeh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L21/78 ; H01L25/065 ; H01L25/00
Abstract:
A semiconductor structure and a method for forming the same are provided. The method includes: providing a first semiconductor workpiece; depositing a first film on a first surface of the semiconductor workpiece; depositing a second film on a substrate that is transmissive to light within a predetermined wavelength range; and bonding the first film to the second film under a predetermined bonding temperature and a predetermined bonding pressure.
Public/Granted literature
- US20170148756A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-05-25
Information query
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