Invention Grant
- Patent Title: Contacts having a geometry to reduce resistance
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Application No.: US15069439Application Date: 2016-03-14
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Publication No.: US10014255B2Publication Date: 2018-07-03
- Inventor: Lawrence A. Clevenger , Baozhen Li , Kirk D. Peterson , Terry A. Spooner , Junli Wang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L23/532 ; H01L23/535

Abstract:
A method of increasing the surface area of a contact to an electrical device that in one embodiment includes forming a contact stud extending through an intralevel dielectric layer to a component of the electrical device, and selectively forming a contact region on the contact stud. The selectively formed contact region has an exterior surface defined by a curvature and has a surface area that is greater than a surface area of the contact stud. An interlevel dieletric layer is formed on the intralevel dielectric layer, wherein an interlevel contact extends through the interlevel dielectric layer into direct contact with the selectively formed contact region.
Public/Granted literature
- US20170263557A1 CONTACTS HAVING A GEOMETRY TO REDUCE RESISTANCE Public/Granted day:2017-09-14
Information query
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