Invention Grant
- Patent Title: Methods of forming one or more covered voids in a semiconductor substrate
-
Application No.: US15684722Application Date: 2017-08-23
-
Publication No.: US10014211B2Publication Date: 2018-07-03
- Inventor: David H. Wells
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/764 ; H01L21/02
Abstract:
Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.
Public/Granted literature
- US20170352577A1 Methods Of Forming One Or More Covered Voids In A Semiconductor Substrate Public/Granted day:2017-12-07
Information query
IPC分类:
