To provide a semiconductor device equipped with anti-fuse memory cells, which is capable of improving read-out accuracy of information. There is provided a semiconductor device in which an N channel type memory transistor, a selection core transistor, and a selection bulk transistor are respectively electrically coupled in series. The memory transistor and the selection core transistor are formed in a silicon layer of an SOI substrate, and the selection bulk transistor is formed in a semiconductor substrate. A word line is coupled to a memory gate electrode of the memory transistor, and a bit line is coupled to the selection bulk transistor. A write-in operation is performed while applying a counter voltage opposite in polarity to a voltage applied from the word line to the memory gate electrode to the bit line.