Invention Grant
- Patent Title: High sum-rate write-once memory
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Application No.: US15444733Application Date: 2017-02-28
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Publication No.: US10014050B2Publication Date: 2018-07-03
- Inventor: Jay Hua , Shahram Yousefi
- Applicant: Queen's University at Kingston
- Applicant Address: CA Kingston
- Assignee: Queen's University at Kingston
- Current Assignee: Queen's University at Kingston
- Current Assignee Address: CA Kingston
- Agent Stephen J. Scribner
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/10 ; G11C16/04 ; G11C16/08 ; G11C11/56 ; G11C7/10 ; G11C16/34

Abstract:
Provided are modified one-hot (MOH) constructions for WOM codes with low encoding and decoding complexity, that achieve high sum-rates. Features include maximizing writing of data information values for successive rewrites, all-zero and all-one cell state vectors that represent a unique data information value that can be written for many generations, a very high number of writes, and does not sacrifice capacity. One embodiment comprises ordered or unordered MOH code that approaches the upper-bound for large n wits. According to the embodiments, before an erasure is needed, the majority of the wits are encoded, which provides level wearing and maximizes life of cells.
Public/Granted literature
- US20170323679A1 High Sum-Rate Write-Once Memory Public/Granted day:2017-11-09
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