A compound semiconductor according to the present invention can be represented by following chemical formula 1 [Chemical Formula 1] InxMyCo4-mAmSb12-n-z-pXnQ'pTez , wherein in the chemical formula 1, M is at least one element selected from a group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, A is at least one element from a group consisting of Fe, Ni, Ru, Rh, Pd, Ir, and Pt, X is at least one element selected from a group consisting of Si, Ga, Ge, and Sn, and Q' is at least one element selected from a group consisting of O, S, and Se, and wherein x is more than 0 and less than 1, y is more than 0 and less than 1, m is not less than 0 and not more than 1, n is not less than 0 and not more than 7, z is more than 0 and not more than 2, and p is more than 0 and not more than 2.